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SFT1431 Ordering number ENA1624 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device SFT1431 Applications Features Motor drive application. Low ON-resistance. 4V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 11 A Drain Current (PW 10 s) IDP PW 10 s, duty cycle 1% 44 A 1.0 W Allowable Power Dissipation PD Tc=25 C15 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25 C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 35 V Zero-Gate Voltage Drain Current IDSS VDS=35V, VGS=0V 1 A Gate-to-Source Leakage Current IGSS VGS= 16V, VDS=0V ... See More ⇒

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