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SFT1443 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 15 ID Continuous Drain Current (TJ = 175 C)b TC = 125 C 13 IDM Pulsed Drain Current 40 A IS Continuous Source Current (Diode Conduction) 3 IAS Avalanche Current 3 Single Pulse Avalanche Energy L = 0.1 mH EAS 18 mJ TC = 25 C 96b PD Maximum Power Dissipation W TA = 25 C 3a TJ, Tstg Operating Junction and Storage Temperature Ra... See More ⇒

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