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View sgb15n120 datasheet:

sgb15n120_sgb15n120_

SGB15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-PAK) - parallel switching capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC Eoff Tj Marking PackageSGB15N120 1200V 15A 1.5mJ GB15N120 PG-TO-263-3-2150C Maximum Ratings Parameter Symbol Value UnitCollector-emitter voltage VCE 1200 VDC collector current IC A 30 TC = 25C 15 TC = 100C Pulsed collector current, tp limited by Tjmax ICpul s 52 Turn off safe oper

 

Keywords - ALL TRANSISTORS DATASHEET

 sgb15n120 .pdf Design, MOSFET, Power

 sgb15n120 .pdf RoHS Compliant, Service, Triacs, Semiconductor

 sgb15n120 .pdf Database, Innovation, IC, Electricity

 

 
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