View smf4n60 datasheet:
SMF4N60600V N-Channnel MOSFETFeatures 4.0A, 600V, R =2.1@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value UnitV Drain-Source Voltage 600 VDSS4.0* ADrain Current - Continuous(Tc=25C)ID- Continuous(Tc=100C)2.5* AI Drain Current -Pulsed (Note1) 16* ADMV Gate-Source Voltage 30 VGSSE Single Pulsed Avalanche Energy (Note2) 240 mJASI Avalanche Current (Note1) 4.0 AARE Repetitive Avalanche Energy (Note1) 10.0 mJARdv/dt Peak Diode Recovery dv/dt (Note3) 4.5 V/ns33 WPower Dissipation(T =25C)CPD-Derate above 25C0.26 W/CTj Operating Junction
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