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ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 700 V Collector Base Voltage VCBO 400 V Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 9 V Collector Current IC 4 A O Power Dissipation (Ta = 25 C) Ptot 2 W O Power Dissipation (Tc = 25 C) Ptot 75 W O Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 55 to + 150 C O Characteristics at Ta = 25 C Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 5 V, IC = 1 A hFE 10 - 60 - at VCE = 5 V, IC = 2 A hFE 8 - 40 - Collector Base Cutoff Current ICBO - - 1 mA at VCB = 700 V Emitter Base Cutoff Current IEBO - - 1 mA at VEB = 9 V Collector Emitter Breakdown Voltage V(BR)CEO 400 - - V at IC = 10 mA Collector Emitter... See More ⇒

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