View stp6506 datasheet:

STP6506 Dual P Channel Enhancement Mode MOSFET -2.8ADESCRIPTION The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. FEATURE PIN CONFIGURATION TSOP-6 -30V/-2.8A, RDS(ON)=105mohm@VGS=-10V -30V/-2.5A, RDS(ON)=135mohm@VGS=-4.5V D1 S1 D2 Super high density cell design for extremely low RDS(ON) Exceptional an-resistance and maximum DC current capability TSOP-6P package design 06YW

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