View stp65nf06 datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP65NF06FEATURESWith TO-220 packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Gate-Source Voltage 20 VGSSDrain Current-Continuous@T =25C 60I AD42T =100CI Drain Current-Single Pulsed 240 ADMP Total Dissipation 110 WDT Operating Junction Temperature -55~175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 1.36/WRth(ch-a) Channel-to-ambient thermal resistance 62.51isc website

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