View tip29 datasheet:

isc Silicon NPN Power Transistors TIP29DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 40V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 0.7V(Max.)@I = 1.0ACE(sat) CComplement to Type TIP30Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 40 VCBOV Collector-Emitter Voltage 40 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 1 ACI Collector Current-Pulse 3 ACMI Base Current 0.4 ABCollector Power DissipationP 30 WCT =25CT Junction Temperature 150 jStorage Ttemperature Range -65~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Juncti

Keywords - ALL TRANSISTORS DATASHEET

 tip29.pdf Design, MOSFET, Power

 tip29.pdf RoHS Compliant, Service, Triacs, Semiconductor

 tip29.pdf Database, Innovation, IC, Electricity