View tip2955 datasheet:

isc Silicon PNP Power Transistor TIP2955DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = -4AFE CCollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to Type TIP3055Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage -60 VCEOV Emitter-Base Voltage -7 VEBOI Collector Current-Continuous -15 ACI Base Current -7 ABP Collector Power Dissipation T =25 90 WC CJunction Tmperature 150 TjStorage Temperature Range -65~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER VALUE UNITR Thermal Resistance,Junction to Case 1.39 /W

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