View tip2955t datasheet:

isc Silicon PNP Power Transistor TIP2955TDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 4ACE(sat CComplement to Type TIP2955TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -70 VCBOV Collector-Emitter Voltage -60 VCEOV Emitter-base Voltage -5 VEBOI Collector Current-Continuous -10 ACI Collector Current-Peak -12 ACI Base Current -4 ABP Collector Power Dissipation@T =25 75 WC CT Junction Tmperature 150 jT Storage Temperature Range -65~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER VALUE UNITR Thermal Resistance

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