View tip29a datasheet:

isc Silicon NPN Power Transistors TIP29ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 0.7V(Max.)@I = 1.0ACE(sat) CComplement to Type TIP30AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 1 ACI Collector Current-Pulse 3 ACMI Base Current 0.4 ABCollector Power DissipationP 30 WCT =25CT Junction Temperature 150 jT Storage Ttemperature Range -65~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junct

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