View tk10a60d datasheet:

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK10A60D Unit: mmSwitching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 600 VGate-source voltage VGSS 30 VDC (Note 1) ID 10 Drain current A Pulse (Note 1) IDP 40 1: Gate 2: Drain Drain power dissipation (Tc = 25C) PD 45 W3: Source Single pulse avalanche energy EAS 363 mJ (Note 2)Avalanche current IAR 10 AJEDEC Repetitive avalanche energy (Note 3) EAR 4.5 mJJEITA SC-67Channel temperature Tch 150 CTOSHIBA 2-10U1BStorage tem

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