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TK10A60D5MOSFETs Silicon N-Channel MOS (-MOS)TK10A60D5TK10A60D5TK10A60D5TK10A60D51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.8 (typ.)(3) High forward transfer admittance: |Yfs| = 6.0 S (typ.)(4) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)(5) Enhancement mode: Vth = 2.5 to 4.5 V (VDS = 10 V, ID = 1 mA)3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packaging and Internal Circuit1: Gate2: Drain3: SourceTO-220SIS4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise spe

 

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