View 1n4154 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
DISCRETE POWER AND SIGNAL 1N4154 TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high • 500 milliwatt Power Dissipation package. forward conductance of this diode packaged in a DO-35 • Fast Switching Speed, miniature Glass Axial leaded package makes it desirable also as a general purpose diode. • Typical capacitance less than 1.0 picofarad.
Keywords
1n4154 Datasheet, Design, MOSFET, Power
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