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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

1ss181_

1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : V = 0.92V (Typ.) F (3) Fast reverse recovery time : t = 1.6ns (Typ.) rr Small total capacitance : CT = 2.2pF (Typ.) Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V

Keywords

 1ss181 Datasheet, Design, MOSFET, Power

 1ss181 RoHS, Compliant, Service, Triacs, Semiconductor

 1ss181 Database, Innovation, IC, Electricity

 

 
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