View 1ss184 datasheet:

1SS184 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : V = 0.9V (typ.) F (3) Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : = 2.2pF (typ.) T Maximum Ratings (Ta = 25° °C) ° ° Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA Surge current (10ms) IFSM 2 (*) A Power dissipation P 150 mW JEDEC TO-236MOD Junction temperature Tj 125 C EIAJ SC-59 Storage temperature Tstg -55~125 C TOSHIBA 1-3G1E *: Unit rating. Total rating = Unit rating ? 1.5. Weight: 0.012g Electrical Characteristics