View 1ss272 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application Small package : SC-61 Low forward voltage : V = 0.92V (typ.) F (3) Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25° °C) ° ° Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA Surge current (10ms) IFSM 2 (*) A Power dissipation P 150 mW JEDEC ? Junction temperature Tj 125 C EIAJ SC-61 TOSHIBA 2-3J1A Storage temperature range Tstg -55~125 C Weight: 0.013g (*) Unit rating. Total rating = Unit rating ? 1.5. Electrical Characteristics (Ta
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1ss272 Datasheet, Design, MOSFET, Power
1ss272 RoHS, Compliant, Service, Triacs, Semiconductor
1ss272 Database, Innovation, IC, Electricity
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