View 1ss350 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number :EN3156A 1SS350 Silicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features Package Dimensions · Small interterminal capacitance (C=0.69pF typ). unit:mm · Low forward voltage (VF=0.23V max). 1148A · Very small-sized package permitting the 1SS350- [1SS350] applied sets to be made small and slim. 1:Anode 2:No contact 3:Cathode SANYO:CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Peak Reverse Voltage VRM 5 V Forward Current IF 30 mA Junction Temperature Tj 125 ?C Storage Temperature Tstg –55 to +125 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Forward Voltage VF IF=1mA 0.23 V Forward Current IF VF=0.5V 30 mA Reverse Current
Keywords
1ss350 Datasheet, Design, MOSFET, Power
1ss350 RoHS, Compliant, Service, Triacs, Semiconductor
1ss350 Database, Innovation, IC, Electricity
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