View 1ss352 datasheet:

1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : V = 0.98V (typ.) F (3) Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : CT = 0.5pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1 A Power dissipation P 200 (*) mW Junction temperature Tj 125 °C JEDEC ? Storage temperature Tstg -55~125 °C EIAJ ? (*) Mounted on a glass epoxy circuit board of 20 20mm, 1-1E1A TOSHIBA pad dimension of 4 4mm. Weight: 0.004g Electrical Characteristics (Ta