View 1ss355 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
1SS355 Diodes High-Speed Switching Diode 1SS355 Applications External dimensions (Unit : mm) High speed switching CATHODE MARK Features 1) Small surface mounting type.(UMD2) 2) High Speed.(trr = 1.2ns Typ.) 3) High reliability with high surge current handling capability. 0.1+0.1 Construction -0.05 0.3±0.05 Silicon epitaxial planar 1.25±0.1 +0.2 0.7 -0.1 ROHM : UMD2 EIAJ : SC - 76 JEDEC : SOD - 323 Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 90 V DC reverse voltage VR 80 V Peak forward current IFM 225 mA Mean rectifying current Io 100 mA Surge current (1S) Isurge 500 mA Junction temperature Tj 125 °C Storage temperature Tstg -55 ? +125 °C Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max
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1ss355 Datasheet, Design, MOSFET, Power
1ss355 RoHS, Compliant, Service, Triacs, Semiconductor
1ss355 Database, Innovation, IC, Electricity
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