View 1ss357 datasheet:

1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : I = 5µA (max) R Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1 A Power dissipation P 200* mW Junction temperature Tj 125 °C JEDEC ? Storage temperature range Tstg -55~125 °C EIAJ ? * Mounted on a glass epoxy circuit board of 20 ? 20mm, TOSHIBA 1-1E1A pad dimension of 4 ? 4mm. Weight: 0.004g Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Test Co