View 1ss360 datasheet:

1SS360 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : V = 0.92V (typ.) F Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2 * A Power dissipation P 100 mW Junction temperature Tj 125 °C JEDEC ? Storage temperature Tstg -55 125 °C EIAJ TOSHIBA 1-2S1A * Unit rating. Total rating = unit rating ? 1.5 Weight: 2.4mg Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Test