View 1ss360f datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
1SS360F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360F Ultra High Speed Switching Applications Unit in mm Small package : 1608 Flat lead Excellent in forward current and forward voltage characteristics : V = 0.92V (typ.) F (3) Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : C = 2.2pF (typ.) T Maximum Ratings (Ta = 25C) Characterist
Keywords
1ss360f Datasheet, Design, MOSFET, Power
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