View 1ss361 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
1SS361 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361 Ultra High Speed Switching Application Unit in mm Small package Low forward voltage : V = 0.9V (typ.) F Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : C = 0.9pF (typ.) T Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse
Keywords
1ss361 Datasheet, Design, MOSFET, Power
1ss361 RoHS, Compliant, Service, Triacs, Semiconductor
1ss361 Database, Innovation, IC, Electricity