View 1ss361f datasheet:

1SS361F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361F Ultra High Speed Switching Applications Unit in mm Small package : 1608 Flat lead Excellent in forward current and forward voltage characteristics : V = 0.9V (typ.) F (3) Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA Surge current (10ms) IFSM 2 (*) A Power dissipation P 100 mW Junction temperature Tj 125 °C JEDEC ? Storage temperature range Tstg -55 125 °C EIAJ ? (*) Unit rating. Total rating = unit rating ? 1.5 ? TOSHIBA Weigh