View 1ss361f datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
1SS361F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361F Ultra High Speed Switching Applications Unit in mm Small package : 1608 Flat lead Excellent in forward current and forward voltage characteristics : V = 0.9V (typ.) F (3) Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25C) Characteristic
Keywords
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