View 1ss362 datasheet:

1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : V = 0.97V (typ.) F Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : CT = 0.5pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 240 * mA Average forward current IO 80 * mA Surge current (10ms) IFSM 1 * A Power dissipation P 100 mW Junction temperature Tj 125 °C JEDEC ? Storage temperature Tstg -55 125 °C EIAJ ? TOSHIBA 1-2S1C * Unit rating. Total rating = unit rating ? 0.7 Weight: 2.4mg Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Tes