View 1ss367 datasheet:

1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm Small package Low forward voltage: V = 0.23V (typ.) @I = 5mA F F Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1 A Power dissipation P * 200 mW Junction temperature Tj 125 °C Storage temperature Tstg -55~125 °C Operating temperature range Topr -40~100 °C JEDEC ? EIAJ ? * Mounted on a glass epoxy circuit board of 20 ? 20 mm TOSHIBA 1-1E1A Pad dimension of 4 ? 4 mm. Weight: 0.004g Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Test Conditi