View 1ss382 datasheet:

1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm Small package Composed of 2 independent diodes. Low forward voltage : V = 0.92V (typ.) F (3) Fast reverse recovery time : Trr = 1.6ns (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2 A Power dissipation P 100 * mW Junction temperature Tj 125 °C JEDEC ? Storage temperature range Tstg -55~125 °C EIAJ ? TOSHIBA 1-2U1A *: Unit rating. Total rating = unit rating ? 1.5 Weight: 0.006g Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Te