View 1ss383 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: V = 0.54V (typ.) F (3) Low reverse current: IR = 5A (max) Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Max
Keywords
1ss383 Datasheet, Design, MOSFET, Power
1ss383 RoHS, Compliant, Service, Triacs, Semiconductor
1ss383 Database, Innovation, IC, Electricity
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