View 1ss383 datasheet:

1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: V = 0.54V (typ.) F (3) Low reverse current: IR = 5µA (max) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 1 * A Power dissipation P 100 * mW Junction temperature Tj 125 °C JEDEC ? Storage temperature range Tstg -55~125 °C EIAJ ? TOSHIBA 1-2U1A Operating temperature range Topr -40~100 °C Weight: 0.006g *: Unit rating. Total rating = unit rating ? 1.5 Electrical Characteristics (Ta =