View 1ss384 datasheet:

1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: V = 0.23V (typ.) @I = 5mA F (2) F Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 1 A Power dissipation P 100 * mW Junction temperature Tj 125 °C Storage temperature range Tstg -55 125 °C JEDEC ? Operating temperature range Topr -40 100 °C EIAJ ? TOSHIBA 1-2U1A *: Unit rating. Total rating = unit rating ? 1.5 Weight: 0.006g Electrical Characteristics (Ta = 25°C) Test Characteristic Sy