View 1ss385 datasheet:

1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 1 * A Power dissipation P 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55 125 °C Operating temperature range Topr -40 100 °C JEDEC ? EIAJ ? *: Unit rating. Total rating = unit rating ? 1.5 TOSHIBA 1-2S1B Weight: 2.4mg Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit VF (1)