View 1ss385f datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Ultra-small package Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 (*) mA Average forward current IO 100 (*)
Keywords
1ss385f Datasheet, Design, MOSFET, Power
1ss385f RoHS, Compliant, Service, Triacs, Semiconductor
1ss385f Database, Innovation, IC, Electricity
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