View 1ss387 datasheet:

1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : V = 0.98V (typ.) F (3) Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : C = 0.5pF (typ.) T Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1 A Power dissipation P 150 * mW JEDEC ? Junction temperature Tj 125 °C EIAJ ? Storage temperature Tstg -55 125 °C TOSHIBA 1-1G1A Weight: 1.4mg * : Mounted on a glass epoxy circuit board of 20 ? 20mm, pad dimension of 4 ? 4mm. Electrical Characteristics (Ta