View 1ss387 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : V = 0.98V (typ.) F (3) Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : C = 0.5pF (typ.) T Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 85 V Rever
Keywords
1ss387 Datasheet, Design, MOSFET, Power
1ss387 RoHS, Compliant, Service, Triacs, Semiconductor
1ss387 Database, Innovation, IC, Electricity
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