View 1ss388 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
1SS388 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application Unit: mm Small package Low forward voltage: V = 0.54V (typ.) F (3) Low reverse current: I = 5A (typ.) R Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300
Keywords
1ss388 Datasheet, Design, MOSFET, Power
1ss388 RoHS, Compliant, Service, Triacs, Semiconductor
1ss388 Database, Innovation, IC, Electricity
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