View 1ss388 datasheet:

1SS388 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application Unit: mm Small package Low forward voltage: V = 0.54V (typ.) F (3) Low reverse current: I = 5µA (typ.) R Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1 A Power dissipation P * 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC ? Operating temperature range Topr -40~100 °C EIAJ ? TOSHIBA 1-1G1A * Mounted on a glass epoxy circuit board of 20 ? 20 mm, Weight: 1.4mg pad dimension of 4 ? 4 mm. Electrical Characteristics (Ta = 25°C)