View 1ss389 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application Unit: mm Small package Low forward voltage: V = 0.23V (typ.) @I = 5mA F F Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 m
Keywords
1ss389 Datasheet, Design, MOSFET, Power
1ss389 RoHS, Compliant, Service, Triacs, Semiconductor
1ss389 Database, Innovation, IC, Electricity
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