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1ss389_

1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application Unit: mm Small package Low forward voltage: V = 0.23V (typ.) @I = 5mA F F Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1 A Power dissipation P * 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55 125 °C Operating temperature range Topr -40 100 °C JEDEC ? EIAJ ? *: Mounted on a glass epoxy circuit board of 20 ? 20mm, TOSHIBA 1-1G1A pad dimension of 4 ? 4mm. Weight: 1.4mg Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Test C

Keywords

 1ss389 Datasheet, Design, MOSFET, Power

 1ss389 RoHS, Compliant, Service, Triacs, Semiconductor

 1ss389 Database, Innovation, IC, Electricity

 

 
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