View 1ss391 datasheet:

1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF (2) = 0.23V (typ.) @IF = 5mA Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 1 * A Power dissipation P 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55 125 °C Operating temperature range Topr -40 100 °C JEDEC ? EIAJ SC-61 *: Unit rating. Total rating = unit rating ? 1.5 TOSHIBA 2-3J1A Weight: 0.013g Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Test Condition Min Typ.