View 1ss392 datasheet:

1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : I = 5µA (max) R Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 1 * A Power dissipation P 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55 125 °C JEDEC TO-236MOD Operating temperature range Topr -40 100 °C EIAJ SC-59 TOSHIBA 1-3G1F * : Unit rating. Total rating = unit rating ? 1.5 Weight: 0.012g Electrical Characteristics (Ta = 25°C) Test Charact