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1ss392_

1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : I = 5A (max) R Small package : SC-59 Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current I

Keywords

 1ss392 Datasheet, Design, MOSFET, Power

 1ss392 RoHS, Compliant, Service, Triacs, Semiconductor

 1ss392 Database, Innovation, IC, Electricity

 

 
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