View 1ss392 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : I = 5A (max) R Small package : SC-59 Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current I
Keywords
1ss392 Datasheet, Design, MOSFET, Power
1ss392 RoHS, Compliant, Service, Triacs, Semiconductor
1ss392 Database, Innovation, IC, Electricity