View 1ss393 datasheet:

1SS393 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : I = 5µA (max) R Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 1 * A Power dissipation P 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55 125 °C JEDEC ? Operating temperature range Topr -40 100 °C EIAJ SC-70 TOSHIBA 1-2P1B * : Unit rating. Total rating = unit rating 1.5 Weight: 0.006g Electrical Characteristics (Ta = 25°C) Test Characteristic