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1ss393_

1SS393 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : I = 5A (max) R Small package : SC-70 Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current I

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 1ss393 Datasheet, Design, MOSFET, Power

 1ss393 RoHS, Compliant, Service, Triacs, Semiconductor

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