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1ss394_

1SS394 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application Unit: mm Small package Low forward voltage: V = 0.23V (typ.) @I = 5mA F (2) F Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 1

Keywords

 1ss394 Datasheet, Design, MOSFET, Power

 1ss394 RoHS, Compliant, Service, Triacs, Semiconductor

 1ss394 Database, Innovation, IC, Electricity

 

 
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