View 1ss394 datasheet:

1SS394 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application Unit: mm Small package Low forward voltage: V = 0.23V (typ.) @I = 5mA F (2) F Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1 A Power dissipation P 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55 125 °C Operating temperature range Topr -40 100 °C JEDEC TO-236MOD EIAJ SC-59 TOSHIBA 1-3G1B Weight: 0.012g Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit VF (1) ? IF = 1mA ? 0.18 ? Forward