View 1ss395 datasheet:

1SS395 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application Unit: mm Small package Low forward voltage: V = 0.23V (typ.) @I = 5mA F (2) F Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1 A Power dissipation P 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55 125 °C Operating temperature range Topr -40 100 °C JEDEC ? EIAJ SC-70 * Unit rating. Total rating = unit rating ? 0.7 TOSHIBA 1-2P1D Weight: 0.006g Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Ci