View 1ss397 datasheet:

1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications Unit: mm Low forward voltage : VF = 1.0V (typ.) High voltage : V = 400V (min.) R Fast reverse recovery time : t = 0.5µs (typ.) rr Small total capacitance : CT = 2.5pF (typ.) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) IFSM 2 A Power dissipation P 100 mW JEDEC ? Junction temperature Tj 125 °C EIAJ SC-70 Storage temperature range Tstg -55 125 °C TOSHIBA 1-2P1D Weight: 0.006g Electrical Characteristics (Ta = 25°C) Test Characteristic Sy