View 1ss397 datasheet:

1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications Unit: mm Low forward voltage : VF = 1.0V (typ.) High voltage : V = 400V (min.) R Fast reverse recovery time : t = 0.5�s (typ.) rr Small total capacitance : CT = 2.5pF (typ.) Small package : SC-70 Maximum Ratings (Ta = 25�C) Characteristic Symbol Rating Unit

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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050