View 1ss398 datasheet:

1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications Unit: mm Low forward voltage : VF = 1.0V (typ.) High voltage : V = 400V (min) R Fast reverse recovery time : t = 0.5µs (typ.) rr Small total capacitance : CT = 2.5pF (typ.) Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2 * A Power dissipation P 150 mW JEDEC TO-236MOD Junction temperature Tj 125 °C EIAJ SC-59 Storage temperature range Tstg -55~125 °C TOSHIBA 1-3G1G Weight: 0.012g * : Unit rating. Total rating = unit rating ? 0.7