View 1ss399 datasheet:

1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Unit: mm Low forward voltage : VF = 1.0V (typ.) High voltage : V = 400V (min.) R Fast reverse recovery time : t = 0.5µs (typ.) rr Small total capacitance : CT = 2.5pF (typ.) Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2 * A Power dissipation P 150 * mW JEDEC ? Junction temperature Tj 125 °C EIAJ SC-61 Storage temperature range Tstg -55 125 °C TOSHIBA 2-3J1A Weight: 0.013g * : Unit rating. Total rating = unit rating ? 1.5 Elect