View 1sv252 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC ? JEITA SC-70 TOSHIBA 1-2P1C Weight: 0.006 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage VR IR 10 A 50 V Reverse current IR VR 50 V 0.1 A Forward voltage VF IF 50 mA 0.93 0.98 V Total capacitance (Note) CT VR 50 V, f 1 MHz 0.2 0.4 pF Series resistance rs IF 10 mA, f 100 MHz 3.5 10 Note: CT is measured by 3 terminal method with capacitance bridge. Ma
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1sv252 Datasheet, Design, MOSFET, Power
1sv252 RoHS, Compliant, Service, Triacs, Semiconductor
1sv252 Database, Innovation, IC, Electricity
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