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2n2102

2N2102 ® EPITAXIAL PLANAR NPN GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intended for a wide variety of small-signall and medium power applications in military and industrial equipments. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 120 V VCEO Collector-Emitter Voltage (IB = 0) 65 V VCER 80 V Collector-Emitter Voltage (R ? 10?) BE V Emitter-Base Voltage (I = 0) 7 V EBO C I Collector Current 1 A C Ptot Total Dissipation at Tamb ? 25 oC 1 W 5 W at TC ? 25 oC o Tstg Storage Temperature -65 to 175 C o Tj Max. Operating Junction Temperature 175 C 1/4 December 2002 2N2102 THERMAL DATA o

Keywords

 2n2102 Datasheet, Design, MOSFET, Power

 2n2102 RoHS, Compliant, Service, Triacs, Semiconductor

 2n2102 Database, Innovation, IC, Electricity

 

 
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