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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369 NPN switching transistor 1997 Jun 20 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistor 2N2369 FEATURES PINNING • Low current (max. 200 mA) PIN DESCRIPTION • Low voltage (max. 15 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • High-speed switching • VHF amplification. 3 handbook, halfpage 1 2 DESCRIPTION 2 NPN switching transistor in a TO-18 metal package. 3 MAM264 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 40 V VCEO collector-emitter voltage open base - 15 V IC c
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2n2369 Datasheet, Design, MOSFET, Power
2n2369 RoHS, Compliant, Service, Triacs, Semiconductor
2n2369 Database, Innovation, IC, Electricity
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