View 2n2369re datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N2369/D Switching Transistors 2N2369 NPN Silicon * 2N2369A COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 3 2 1 MAXIMUM RATINGS Rating Symbol Value Unit CASE 22–03, STYLE 1 Collector–Emitter Voltage VCEO 15 Vdc TO–18 (TO–206AA) Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 4.5 Vdc Collector Current (10 ms pulse) IC(Peak) 500 mA Collector Current — Continuous IC 200 mA Total Device Dissipation @ TA = 25°C PD 0.36 Watt Derate above 25°C 2.06 mW/°C Total Device Dissipation @ TC = 100°C PD 0.68 Watts Derate above 100°C 6.85 mW/°C Operating and Storage Junction TJ, Tstg –65 to +200 °C Temperature Range THERMAL CHARACTERISTICS Characteris