View 2n3393 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 25 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, T °C stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 15
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2n3393 Datasheet, Design, MOSFET, Power
2n3393 RoHS, Compliant, Service, Triacs, Semiconductor
2n3393 Database, Innovation, IC, Electricity
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