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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2n3704

2N3704 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.

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