View 2n3819 datasheet:

2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V ID Drain Current 50 mA IGF Forward Gate Current 10 mA TSTG Storage Temperature Range -55 ~ 150 °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on application